The EPCS4001 is a rad-hard CMOS ASIC, co-developed with The European Organization for Nuclear Research, known as CERN, tailored specifically for use with EPC's GaN-based Rad Hard power stage the ...

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...

The EPCS4001 is a rad-hard CMOS ASIC co-developed with CERN and built to operate with EPC’s GaN-based rad-hard power stage. EPC Space has introduced the EPCS4001, a high-frequency, radiation-hardened ...

Argan (AGX) “announces that its wholly owned subsidiary, Gemma Power Systems, received a notice to proceed on its previously announced engineering, procurement and construction services contract ...

Xu Lu, general manager of China Power Engineering Consulting Group, as well as chairman of NWEPDI, signed the EPC contract for the Bilasur and Banka PV projects in Azerbaijan, with Mohamed Jameel ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power. Claiming a new benchmark for 100-V gallium-nitride (GaN) ...

The complicated patent battle between US GaN company Efficient Power Conversion (EPC) and Chinese GaN firm Innoscience continues, with both parties claiming success in recent rulings. EPC says that ...

In a recent article in Nature Materials, researchers explored a novel approach to boosting thermal transport across solid interfaces by activating hyperbolic phonon-polariton (HPhP) modes in hexagonal ...