Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times ...

Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever ...

Poxiao”, or Dawn, is the fastest flash memory ever created. It can erase and rewrite data in 400 picoseconds. Memory on the ...

PoX is a new class of ultra‑fast, ultra‑green memories that meet the swelling appetite of large‑language‑model accelerators.

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit ...

Espressif has released an upgraded version of its ESP32-C2 v2.0 (ESP8684) chip with improvements in memory, storage and ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented ...

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

The devices are entry-line 32-bit MCUs based on the Arm Cortex-M85 (CM85) core (360MHz/480MHz) with Helium and TrustZone, providing breakthrough performance (6.39 CoreMarks/MHz / 3000 CoreMarks @ ...

Semiconductor Engineering has compiled a comprehensive list of the types of packages, what’s included in them, and various processes used for assembling them. Included in this report are discussions ...