Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

STMicroelectronics (STM) and Innoscience announce the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

Last year, Jaguar and Mazda presented updated versions of their respective logos. Jaguar went with a “seamless blend of upper and lower case” in a far-too-subtle nod to the British marque’s ...

Finally, on the lighting tab, you can choose how bright you want the illuminated Razer logo on the front, as well as the RGB keyboard, on both battery and while charging. This is also where you ...

The sale includes: IP, rights and patents for thin-flexible GaAs solar cells Aixtron R6 MOCVD systems with two configured for GaAs and four configured for GaN (gallium nitride) applications Aixtron ...

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...

Last year, Google released a niche feature in its experimental NotebookLM product that turned out to be a sleeper hit. You could upload any document to NotebookLM, and it would use AI to generate ...

Transient spikes can be caused by lightning strikes, nearby machinery, power surges from load switching, etc. An example is a modern automobile where ever-increasing on-board electronics are connected ...